| PART |
Description |
Maker |
| PBSS5120T PBSS5120T215 |
20 V; 1 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd
20 V, 1 A PNP low VCEsat (BISS) transistor
20 V 1 A PNP low VCEsat (BISS) transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PBSS5350D |
50 V, 3 A PNP low VCEsat (BISS) transistor 50伏，3安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4021PT |
20 V, 3.5 A PNP low VCEsat (BISS) transistor
20 V, 3.5 A PNP low V_CEsat (BISS) transistor 3500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PBSS4021PZ |
20 V, 6.6 A PNP low V_CEsat (BISS) transistor 6600 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
20 V, 6.6 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBRN113E PBRN113EK PBRN113ES PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 1 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 1 k搂?
|
NXP Semiconductors
|
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBSS4032PT PBSS4032PT-215 |
30 V, 2.4 A PNP low VCEsat (BISS) transistor
30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 ?18 December 2009
|
NXP Semiconductors
|
| PBSS5350SS PBSS4350SPN PBSS4350SS PBSS5350SS115 |
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
NXP[NXP Semiconductors]
|
| PBLS1501V PBLS1501Y |
15 V PNP BISS loadswitch
|
NXP Semiconductors N.V.
|
| PBLS4005D |
40 V PNP BISS loadswitch
|
NXP Semiconductors
|
|
